tm december 2007 ?2007 fairchild semiconductor corporation FDS8672S rev.d2 www.fairchildsemi.com 1 FDS8672S n-channel powertrench ? syncfet ? FDS8672S n-channel powertrench ? syncfet ? 30v, 18a, 4.8m ? features ? max r ds(on) = 4.8m ? at v gs = 10v, i d = 18a ? max r ds(on) = 7.0m ? at v gs = 4.5v, i d = 15a ? includes syncfet schottky body diode ? high performance trench tech nology for extremely low r ds(on) and fast switching ? high power and current handling capability ? 100% r g (gate resistance) tested ? termination is lead-free and rohs compliant general description the FDS8672S is designed to replace a single mosfet and schottky diode in synchronous dc/ dc power supplies. this 30v mosfet is designed to maximize power conversion efficiency, providing a low r ds(on) and low gate charge. the FDS8672S includes a patented combination of a mosfet monolithically integrated with a schottky diode using fairchild?s monolithic syncfet technology. application ? synchronous rectifier for dc/dc converters ? notebook vcore low side switch ? point of load low side switch mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous 18 a -pulsed 80 e as single pulse avalanche energy (note 3) 216 mj p d power dissipation t a = 25c (note 1a) 2.5 w power dissipation t a = 25c (note 1b) 1.0 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 25 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDS8672S FDS8672S so8 13?? 12mm 2500 units g s s s d d d d 5 6 7 8 3 2 1 4 so-8 d d d d s s s g pin 1
FDS8672S n-channel powertrench ? syncfet ? www.fairchildsemi.com 2 ?2007 fairchild semiconductor corporation FDS8672S rev.d2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 10ma, referenced to 25 c 33 mv/ c i dss zero gate voltage drain current v ds = 24v, v gs = 0v 500 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1ma 1.0 2.1 3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 10ma, referenced to 25 c -5 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 18a 3.8 4.8 m : v gs = 4.5v, i d = 15a 5.3 7.0 v gs = 10v, i d = 18a, t j = 125 c 5.3 7.8 g fs forward transconductance v ds = 5v, i d = 18a 78 s dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz 2005 2670 pf c oss output capacitance 985 1310 pf c rss reverse transfer capacitance 135 205 pf r g gate resistance f = 1mhz 0.6 2.0 : switching characteristics t d(on) turn-on delay time v dd = 15v, i d = 18a, v gs = 10v, r gen = 6 : 12 22 ns t r rise time 4 10 ns t d(off) turn-off delay time 26 42 ns t f fall time 3 10 ns q g total gate charge v gs = 0v to 10v v dd = 15v, i d = 18a 29 41 nc q g total gate charge v gs = 0v to 5v 15 21 nc q gs gate to source charge 5.5 nc q gd gate to drain ?miller? charge 3.7 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 18a 0.8 1.2 v v gs = 0v, i s = 1.8a 0.4 0.7 t rr reverse recovery time i f = 18a, di/dt = 300a/ p s 27 43 ns q rr reverse recovery charge 31 50 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 300 p s, duty cycle < 2.0%. 3. starting t j = 25c, l = 3mh, i as = 12a, v dd = 30v, v gs = 10v. a) 50c/w when mounted on a 1in 2 pad of 2 oz copper. b) 125c/w when mounted on a minimum pad.
FDS8672S n-channel powertrench ? syncfet ? www.fairchildsemi.com 3 ?2007 fairchild semiconductor corporation FDS8672S rev.d2 typical characteristics t j = 25c unless otherwise noted figure 1. 0123 0 20 40 60 80 v gs = 10v v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = 4v v gs = 3.5v v gs = 3v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 20406080 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 3.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 4.5v v gs = 4v v gs = 3v v gs = 10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 18a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 3 6 9 12 15 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = 18a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 01234 0 20 40 60 80 v dd = 5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDS8672S n-channel powertrench ? syncfet ? www.fairchildsemi.com 4 ?2007 fairchild semiconductor corporation FDS8672S rev.d2 figure 7. 0 5 10 15 20 25 30 0 2 4 6 8 10 i d = 18a v dd = 15v v dd = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 20v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 60 5000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 500 30 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 5 10 15 20 r t ja = 50 o c/w v gs = 10v v gs = 4.5v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 dc 10s 1s 100ms 10ms 1ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 single pulse r t ja = 125 o c/w t a = 25 o c 0.5 v gs = 10v p ( pk ) , peak transient power (w) t, pulse width (s) 3000 s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDS8672S n-channel powertrench ? syncfet ? www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FDS8672S rev.d2 figure 13. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.0001 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDS8672S n-channel powertrench ? syncfet ? www.fairchildsemi.com 6 ?2007 fairchild semiconductor corporation FDS8672S rev.d2 figure 14. FDS8672S syncfet body diode time: 12.5ns/div current: 0.8a/div reverse recovery characteristics figure 15. 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) syncfet body diode reverse leakage vs drain to source voltage typical characteristics t j = 25c unless otherwise noted syncfet schottky body diode characteristics fairchild?s syncfet pr ocess embeds a schottky diode in parallel with powertrench mosf et. this diode exhibits similar characteristics to a discrete ex ternal schottky diode in parallel with a mosfet. figure 14 shows the reverse recovery characteristic of the FDS8672S. schottky barrier diodes exhibit signif icant leakage at high temperature and high reverse voltage. this will increase the power in the device.
www.fairchildsemi.com FDS8672S n-channel powertrench ? syncfet ? ?2007 fairchild semiconductor corporation FDS8672S rev.d2 7 rev. i32 trademarks the following are registered and unregistered trademarks and service marks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make cha nges without notice to any products herein to improve reliability, function, or design. fairchil d does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as cr itical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? tm ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design spec ifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only.
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